unisonic technologies co., ltd 5N70K preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-887.a 5 a , 700v n-channel power mosfet ? description the utc 5N70K is a high voltage power mosfet designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. this power mosfet is usually used in high speed switching applications at power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) = 2.4 ? @v gs = 10 v * ultra low gate charge ( typical 15 nc ) * low reverse transfer capacitance ( c rss = typical 6.5 pf ) * fast switching capability * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 5N70Kl-tf3-t 5N70Kg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
5N70K preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-887.a ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 5 a continuous drain current i d 5 a pulsed drain current (note 2) i dm 20 a avalanche energy single pulsed (note 3) e as 100 mj repetitive (note 2) e ar 10 peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 36 w junction temperature t j +150 c operation temperature t opr -55~+150 c storage temperature t stg -55~+150 c note: 1. 2. 3. 4. a bsolute maximum ratings are those values beyond which the device could be permanently damaged. a bsolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) l = 8mh, i as = 5a, v dd = 50v, r g = 25 ? , starting t j = 25c i sd 5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 3.47 c/w
5N70K preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-887.a ? electrical characteristics (t c = 25c unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d = 250 a 700 v drain-source leakage current i dss v ds =700v, v gs = 0v 1 a gate-source leakage current forward i gss v gs =30v, v ds = 0v 100 na reverse v gs =-30v, v ds = 0v -100 breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 0.6 v/c on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d = 2.5a 2.0 2.4 ? dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz 515 670 pf output capacitance c oss 55 72 pf reverse transfer capacitance c rss 6.5 8.5 pf switching characteristics turn-on delay time t d ( on ) v dd = 325v, i d =5a, r g = 25 ? (note 1, 2) 10 30 ns turn-on rise time t r 60 90 ns turn-off delay time t d ( off ) 38 85 ns turn-off fall time t f 50 100 ns total gate charge q g v ds = 520 v, i d = 5a, v gs = 10 v (note 1, 2) 15 19 nc gate-source charge q gs 2.5 nc gate-drain charge q gd 6.6 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s = 5a 1.4 v maximum continuous drain-source diode forward current i s 5 a maximum pulsed drain-source diode forward current i sm 20 a reverse recovery time t r r v gs = 0v, i s =5a, d if / dt = 100 a/ s (note 1) 300 ns reverse recovery charge q rr 2.2 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
5N70K preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-887.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt waveforms
5N70K preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-887.a ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
5N70K preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-887.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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